WFW9N90 rev.a aug.2010 copyright@winsemi semiconductor co., ltd., all right reserved. silicon n-channel mosfet features ? 9a,900v,r ds(on) (max1.4 ? )@v gs =10v ? ultra-low gate charge(typical 58nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description these n-channel enhancement mode power field effect transistors are produced using winsemi?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistanc e, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation m ode. these devices are well suited for high efficiency switch mode power supplies. absolute maximum ratings symbol parameter value units v dss drain source voltage 900 v i d continuous drain current(@tc=25 ) 9a continuous drain current(@tc=100 ) 5.7 a i dm drain current pulsed (note1) 27 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 663 mj e ar repetitive avalanche energy (note1) 15 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 150 w t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.83 /w r qja thermal resistance , j unction-to -ambient - - 50 /w
WFW9N90 2/7 s teady, all for your advance electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs =30v,v ds =0v - - 10 na gate-source breakdown voltage v (br)gss i g =10 a,v ds =0v 30 - - v drain cut -off current i dss v ds =720v,v gs =0v - - 100 a drain -source breakdown voltage v (br)dss i d =10 ma,v gs =0v 900 - - v gate threshold voltage v gs(th) v ds =10v,i d =1ma 2 - 4 v drain -source on resistance r ds(on) v gs =10v,i d =4a - 1.1 1.4 ? forward transconductance gfs v ds =15v,i d =4a 3.0 7.0 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 2040 - pf reverse transfer capacitance c rss -45 - output capacitance c oss - 190 - switching time rise time tr v dd =400v, i d =4a r g =100 ? (note4,5) -25 - ns turn-on time ton - 60 - fall time tf - 20 - turn-off time toff - 95 - total gate charge(gate-source plus gate-drain) qg v dd =400v, v gs =10v, i d =9a (note4,5) -58 - nc gate-source charge qgs - 32 - gate-drain("miller") charge qgd - 26 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr ---9a pulse drain reverse current i drp ---27a forward voltage(diode) v dsf i dr =9a,v gs =0v - - -1.9 v reverse recovery time trr i dr =9a,v gs =0v, di dr / dt =100 a / s -1.6-ns reverse recovery charge qrr - 20 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l=15mh i as =9a,v dd =90v,r g =25 ? ,starting t j =25 3.i sd 9a,di/dt 200a/us,v dd WFW9N90 3/7 s teady, all for your advance fig.1 on state characteristics fig.2 transfer current characteristics fig.3 on-resistance variation vs drain current fig.4 body diode forward voltage variation with source current and temperature fig.5 capacitance characteristics fig.6 gate charge characteristics
WFW9N90 4/7 s teady, all for your advance fig.9 maximum safe operation area fig.10 maximum drain current vs case temperature fig.11 transient thermal response curve fig.7 breakdown voltage variation fig.8 on-resistance variation vs.temperature
WFW9N90 5/7 s teady, all for your advance fig.12gate test circuit & waveform fig.13 resistive switching test circuit & waveform fig.14unclamped inductive switching test circuit & waveform
WFW9N90 6/7 s teady, all for your advance fig.15 peak diode recovery dv/dt test circuit & waveform
WFW9N90 7/7 s teady, all for your advance to-3pn package dimension unit:mm
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